深圳市天赫铭电子科技有限公司

Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T* Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 μA –12 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = –250 μA,Referenced to 25°C –3 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1 μA
IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 μA –0.4 –0.6 –1.5 V
ΔVGS(th)
ΔTJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 μA,Referenced to 25°C
2.5 mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –2.6 A
VGS = –2.5 V, ID = –2.3 A
VGS = –1.8V, ID = –1.8 A
VGS = –4.5 V, ID = –2.6A , TJ=125°C
30
39
54
40
40
50
80
54
mΩ
ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A
gFS Forward Transconductance VDS = –5 V, ID = –2.6 A 10 S